NTHD4P02FT1G【PDF 2/7 页】MOSFET P-CH 20V 2.2A CHIPFET

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NTHD4P02F

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Units

Junction?to?Ambient (Note 1)

Steady State

t v 5s

T J = 25 ° C

R q JA

110

60

° C/W

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces).

MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

Drain?to?Source Breakdown Voltage

Zero Gate Voltage Drain Current

V (BR)DSS

I DSS

V GS = 0 V, I D = ?250 m A

V DS = ?16 V, V GS = 0 V, T J = 25 ° C

?20

?23

?1.0

V

m A

V DS = ?16 V, V GS = 0 V, T J = 85 ° C

?5.0

Gate?to?Source Leakage Current

I GSS

V DS = 0 V, V GS = ± 12 V

± 100

nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Drain?to?Source On? Resistance

V GS(TH)

R DS(on)

V GS = V DS , I D = ?250 m A

V GS = ?4.5, I D = ?2.2 A

?0.6

?0.75

0.130

?1.2

0.155

V

W

V GS = ?2.5, I D = ?1.7 A

0.200

0.240

Forward Transconductance

g FS

V DS = ?10 V, I D = ?1.7 A

5.0

S

CHARGES AND CAPACITANCES

Input Capacitance

C ISS

185

300

pF

Output Capacitance

Reverse Transfer Capacitance

C OSS

C RSS

V GS = 0 V, f = 1.0 MHz,

V DS = ?10 V

95

30

150

50

Total Gate Charge

Threshold Gate Charge

Gate?to?Source Charge

Gate?to?Drain Charge

Q G(TOT)

Q G(TH)

Q GS

Q GD

V GS = ?4.5 V, V DS = ?10 V,

I D = ?2.2 A

3.0

0.2

0.5

0.9

6.0

nC

SWITCHING CHARACTERISTICS (Note 3)

Turn?On Delay Time

t d(ON)

7.0

12

ns

Rise Time

Turn?Off Delay Time

Fall Time

t r

t d(OFF)

t f

V GS = ?4.5 V, V DD = ?16 V,

I D = ?2.2 A, R G = 2.5 W

13

33

27

25

50

40

DRAIN?SOURCE DIODE CHARACTERISTICS (Note 2)

Forward Diode Voltage

V SD

V GS = 0 V,

?0.85

?1.15

V

I S = ?2.1 A

Reverse Recovery Time

tRR

32

ns

Charge Time

Discharge Time

ta

tb

V GS = 0 V, I S = ?2.1 A ,

dI S /dt = 100 A/ m s

10

22

Reverse Recovery Charge

QRR

15

nC

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)

Parameter

Maximum Instantaneous Forward Voltage

Symbol

V F

Test Conditions

I F = 0.1 A

Min

Typ

0.425

Max

Units

V

I F = 0.5 A

0.480

I F = 1.0 A

0.510

0.575

Maximum Instantaneous Reverse Current

I R

V R = 10 V

1.0

m A

V R = 20 V

5.0

Maximum Voltage Rate of Change

Non?Repetitive Peak Surge Current

dv/dt

I FSM

V R = 20 V

Halfwave, Single Pulse, 60 Hz

10,000

23

V/ns

A

2. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

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